KF3002M3G Series N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications， and low power dissipation in a very small outline surface mount package.
FEATURES
20V/3A: Ros(oN) =29mQ@ Vas=4.5V, lp=3A
Ros(ON) =36mQ@ Vcs=2.5V, lo=2A
High Density Cell Design For Ultra Low On-Resistance
Subminiature surface mount package:SOT23-3L
Application
Battery management
High speed switch
Low power DC to DC converter