光学相干断层扫描探测器HBPR-200M-30K-IN-FC

Si-PIN 光电二极管

0.8 mm Ø

0.8 mm Ø

0.4 mm Ø,
FC version with ball lens

光谱范围

320 - 1000 nm

320 - 1000 nm

320 - 1000 nm

带宽 (−3 dB)

DC - 100 MHz

DC - 200 MHz

DC - 500 MHz

跨阻增益

(可切换)

2.0 x 104 V/A
6.0 x 104 V/A

1.0 x 104 V/A
3.0 x 104 V/A

5.0 x 103 V/A
10.0 x 103 V/A

转换增益
(可切换)

10.8 x 103 V/W typ.

32.4 x 103 V/W typ.

(@ 850 nm)

5.4 x 103 V/W typ.

16.2 x 103 V/W typ.

(@ 850 nm)

2.55 x 103 V/W typ.

5.1 x 103 V/W typ.

(@ 760 nm)

zui小 NEP

≤ 6.5 pW/√Hz (@850 nm)

≤ 7.8 pW/√Hz (@850 nm)

≤ 12 pW/√Hz (@760 nm)

NEP (@ 20 MHz)

≤ 7.4 pW/√Hz (@850 nm)

≤ 8.8 pW/√Hz (@850 nm)

≤ 13 pW/√Hz (@760 nm)

共模 (典型值)

50 dB

45 dB

40 dB

Si-PIN 光电二极管

0.8 mm Ø

0.8 mm Ø

0.4 mm Ø,
FC version with ball lens

光谱范围

320 - 1000 nm

320 - 1000 nm

320 - 1000 nm

带宽 (−3 dB)

DC - 100 MHz

DC - 200 MHz

DC - 500 MHz

跨阻增益

(可切换)

2.0 x 104 V/A
6.0 x 104 V/A

1.0 x 104 V/A
3.0 x 104 V/A

5.0 x 103 V/A
10.0 x 103 V/A

转换增益
(可切换)

10.8 x 103 V/W typ.

32.4 x 103 V/W typ.

(@ 850 nm)

5.4 x 103 V/W typ.

16.2 x 103 V/W typ.

(@ 850 nm)

2.55 x 103 V/W typ.

5.1 x 103 V/W typ.

(@ 760 nm)

zui小 NEP

≤ 6.5 pW/√Hz (@850 nm)

≤ 7.8 pW/√Hz (@850 nm)

≤ 12 pW/√Hz (@760 nm)

NEP (@ 20 MHz)

≤ 7.4 pW/√Hz (@850 nm)

≤ 8.8 pW/√Hz (@850 nm)

≤ 13 pW/√Hz (@760 nm)

共模 (典型值)

50 dB

45 dB

40 dB