VDS= -20V
RDS(ON), Vgs@-1.8V, Ids@-2.0A = 100mΩ@TYP
RDS(ON), Vgs@-4.5V, Ids@-2.8A = 71mΩ@TYP
RDS(ON), Vgs@-2.5V, Ids@-2.0A = 83mΩ@TYP
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Maximum Ratings and Thermal Characteristics (TA = 25℃ unless otherwise noted)
Parameter | Symbol | Limit | Unit | |
Drain-Source Voltage | VDS | -20 | V | |
Gate-Source Voltage | VGS | ±12 | ||
Continuous Drain Current 1) | ID | -2.2 | A | |
Pulsed Drain Current 2) | IDM | -8 | ||
Maximum Power Dissipation | TA=25℃ | PD | 1.25 | W |
TA=75℃ | 0.8 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ℃ | |
Junction-to-Ambient Thermal Resistance (PCB mounted)3) | RθJA | 140 | W/℃ | |
Note: 1. Fused current that based on wire numbers and diameter
2. Repetitive Rating: Pulse width limited by the maximum junction temperature
3. 1-in2 2oz Cu PCB board
ELECTRICAL CHARACTERISTICS
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
Static | ||||||
Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250uA | 20 | -- | -- | V |
Drain-Source On-Stage Resistance | RDS(on) | VGS = -4.5V, ID = -2.8A | -- | 71.0 | 100.0 | mΩ |
Drain-Source On-Stage Resistance | RDS(on) | VGS = -2.5V, ID = -2.0A | -- | 83.0 | 150.0 | |
Drain-Source On-Stage Resistance | RDS(on) | VGS = -1.8V, ID = -2.0A | -- | 100.0 | 170.0 | |
Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250uA | -0.45 | -0.61 | -0.9 | V |
Zero Gate Voltage Drain Current | IDSS | VDS = -9.6V, VGS = 0V | -- | -- | 1 | uA |
Gate Body Leakage | IGSS | VGS = ±8V, IDS=0uA | -- | -- | ±100 | nA |
Dynamic3) | ||||||
Total Gate Charge | Qg | VDS = -6V, ID = -2.8A VGS = -4.5V | -- | -- | -- | nC |
Gate-Source Charge | Qgs | -- | -- |
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